Datasheet: 3sk41

The is a high-performance Silicon N-Channel Dual Gate MOSFET typically used in high-frequency (RF) and microwave applications. It is manufactured by companies including NEC, Hitachi, and Motorola and is often housed in a CAN-4 (similar to TO-72) metal package. Key Features & Applications:

The 3SK41's unique design makes it ideal for several RF-specific scenarios:

The dual-gate structure of the 3SK41 makes it highly versatile in discrete RF receiver front-ends:

Deep Dive into the 3SK41 Datasheet: Core Specs, Pinout, and RF Applications 3sk41 datasheet

The provides critical technical specifications for an legacy N-channel dual-gate Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) . Originally manufactured by Japanese and global semiconductor pioneers including NEC, Hitachi, and Motorola , the 3SK41 was built in a TO-72 (CAN-4) metal package . It was engineering-optimized for high-frequency RF amplification, fast switching, and low noise figures in consumer and industrial communication tuners.

Typically connected to the system ground or a self-biasing resistor network. The substrate is often tied to this lead to minimize RF feedback.

) (Typically used for Automatic Gain Control or Local Oscillator injection). (Primary RF signal input). Architectural Advantages & Dynamic Performance The is a high-performance Silicon N-Channel Dual Gate

, it is a classic component often found in amateur radio equipment and older television tuners. www.jotrin.ru Key Technical Specifications

: High-frequency, low-noise N-channel MOSFETs (similar to 3SK41).

Operating the 3SK41 beyond these limits can cause permanent damage. Always design with a safety margin of at least 20-30% below these maximums. Drain-Source Voltage ( VDScap V sub cap D cap S end-sub The substrate is often tied to this lead

When working with a 3SK41, remember that MOSFETs are highly sensitive to . Even a small spark from your fingertip can puncture the thin oxide layer of the gates, destroying the transistor. Always use an anti-static wrist strap and a grounded soldering iron when handling these components.

The dual-gate configuration of the 3SK41 is its defining advantage for VHF applications:

RDS(on)cap R sub cap D cap S open paren o n close paren end-sub

Looking at the top or bottom of the device package (refer to your specific datasheet graphic for orientation), the four leads correspond to:

The dual-gate structure of the 3SK41 allows for several unique circuit advantages: Reduced Feedback Capacitance: